Initial and Long-Term Frequency Degradation on Ring Oscillators from Plasma Induced Damage in 65 nm Bulk and Silicon On Thin BOX processes

Initial and long-term frequency degradation of ring oscillators caused by plasma-induced damage in 65nm bulk and fully depleted silicon-on-insulator processes

Initial Frequency Degradation and Variation on Ring Oscillators from Plasma Induced Damage in Fully-Depleted Silicon on Insulator Process

Degradations of reliability caused by plasma induced damage (PID) have become a significant concern with miniaturizing a device size. In this paper, we measure frequencies of ring oscillators with an antenna structure on a single stage. PID is relieved by connecting an antenna to a drain because charge flows to a substrate. The difference of initial frequencies is 0.64 % between structures whic...

Nonlinear Modeling and Investigating the Nonlinear Effects on Frequency Response of Silicon Bulk-mode Ring Resonator

This paper presents a nonlinear analytical model for micromechanical silicon ring resonators with bulk-mode vibrations. A distributed element model has been developed to describe the dynamic behavior of the micromechanical ring resonator. This model shows the nonlinear effects in a silicon ring resonator focusing on the effect of large amplitudes around the resonance frequency, material and ele...

The Transient Behavior of LC and Ring Oscillators under External Frequency Injection

 In this work, time domain analysis is used to solve Adler’s equation in order to obtain the required time, for an oscillator under external injection, reaching the steady-state condition. Mathematical approach has been applied to fully describe the transient of frequency acquisition in injection-locked LC and Ring oscillators considering their time-varying nature. Then, the analysis is verifie...

Negative Bias Temperature Instability by Body Bias on Ring Oscillators in Thin BOX Fully-Depleted Silicon on Insulator Process

Body Bias (BB) control on Silicon On Insulator (SOI) mitigates power consumption on the stand-by mode. However, Negative Bias Temperature Instability (NBTI) changes by BB. We measure the NBTI of ring oscillators on thin buried oxide (BOX) fully-depleted SOI process. NBTI is suppressed and power consumption becomes lower by applying Reverse BB (RBB) because larger threshold voltage decreases car...